
Revolutionizing Handset RF Front-ends with 5V E-mode GaN-on-Si on GF RFGaN-LV1
Why GaAs HBT won the “Handset War” but could rapidly decline with new market requirements Before the rise of gallium arsenide (GaAs) HBTs in the
Wide bandwidth, high power and fast switching using proprietary GaN-Si technology at the largest RF and Microwave event

Why GaAs HBT won the “Handset War” but could rapidly decline with new market requirements Before the rise of gallium arsenide (GaAs) HBTs in the

At this Years IEEE IMS Exhibition in Boston we are featuring a brand new demo for each day of the show! Day One is dedicated

Join us in Booth 17076 at #IMS2026 in Boston for the latest breakthroughs and innovations in GaN on Silicon. Let’s revolutionize RF together! https://ims-ieee.org/

Mobile World Congress will be here before we know it! At this year’s event, we’ll provide updates on our high-performance power amplifiers for mobile handsets and our

Coming up later this month is European Microwave Week – and Finwave will be there! Considered Europe’s leading trade show for RF, microwave, RADAR and

Did you miss our GaN-on-Si RF hot switching demo at IEEE IMS Conference in San Francisco ? If so, check out some highlights in this