Wide bandwidth, high power and fast switching using proprietary GaN-Si technology at the largest RF and Microwave event
Excellent article in in our favorite publication Microwave Journal describing Finwave’s approach to GaN -on-Silicon for high volume applications such as smartphones and other mobile
March 24, 2025 Marten Seth, Technical Marketing Manager, Finwave Semiconductor Finwave’s innovative GaN (Gallium Nitride) on Silicon approach is advancing RF technology by delivering the
Our CEO Pierre-Yves Lesaicherre recently caught up with popular semiconductor news site SemiWiki.com. In this Q&A, Pierre-Yves reflects on some of the high points from 2024
3DGaNTM (Gallium Nitride) innovator Finwave Semiconductor, Inc. today announced that Dr. Pierre-Yves Lesaicherre has joined the company as its chief executive officer. In his new role, Dr.
