Product
RF Switch
High-power RF switches are essential for applications requiring robust signal transmission and durability. These switches are designed to operate efficiently under high power levels, making them ideal for use in demanding environments such as defense systems, satellite communications, and high-power transmitters.
Finwave Application Advantage
The unique combination of fast switching and settling time, broadband performance, and high power handling makes them ideal as Tx/Rx switches in 5G communication systems, SDRs, and RADAR systems. To further improve ease of use and the excellent SWaP-C metrics, the entire product line is designed to be used without any external components. This makes them ideal for replacement of legacy switch solutions.
High Power Broadband SP2T and SP4T Switch Products
Product | Frequency | Config | Power (Pulsed/CW) | Insertion Loss | Isolation | Switching Time | Samples | Reserve Your EVK | Information | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|
FW2001 | 30 MHz – 12 GHz | SP2T Reflective | 20 W / 10 W | 0.95 dB @ 6 GHz | 31 dB @ 12 GHz | 85 ns / 200 ns | ||||
FW2002 | 30 MHz – 12 GHz | SP2T Reflective | 30 W / 15 W | 1.1 dB @ 6 GHz | 25 dB @ 12 GHz | 150 ns / 250 ns | ||||
FW2003 | 30 MHz – 8 GHz | SP2T Reflective | 60 W / 30 W | 0.8 dB @ 3 GHz | 34 dB @ 5 GHz | 290 ns / 430 ns | ||||
FW2006 | 30 MHz – 17 GHz | SP2T Reflective | 25 W / 12.5 W | 0.75 dB @ 8 GHz | 37 dB @ 8 GHz | 80 ns / 200 ns | In Development | In Development | In Development | |
FW2007 | 30 MHz – 15 GHz | SP2T Reflective | 60 W / 30 W | 0.8 dB @ 8 GHz | 38 dB @ 8 GHz | 150 ns / 250 ns | In Development | In Development | In Development | |
FW2008 | 30 MHz – 10 GHz | SP2T Reflective | 150 W / 75 W | 0.6 dB @ 5 GHz | 33 dB @ 5 GHz | 250 ns / 400 ns | In Development | In Development | In Development | |
FW2009 | 30 MHz – 25 GHz | SP2T Reflective | 8 W / 3 W | 1.5 dB @ 25 GHz | 27 dB @ 25 GHz | 35 ns / 155 ns | In Development | In Development | In Development | |
FW2010 | 30 MHz – 6 GHz | SP2T Reflective | 100 W / 50 W | 0.25 dB @ 4 GHz | 32 dB @ 4 GHz | 400 ns / 800 ns | In Development | In Development | In Development | |
FW2198 | 30 MHz – 8 GHz | SP4T Reflective | 60 W / 30 W | 1.0 dB @ 8 GHz | 36 dB @ 8 GHz | 150 ns / 300 ns | In Development | In Development | In Development |
High Power Switches for X-Band and Satcom
Product | Frequency | Config | Power (Pulsed/CW) | Insertion Loss | Isolation | Switching Time | Samples | Reserve Your EVK | Information | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|
FW2022 | 8 GHz – 12 GHz | SP2T Reflective | 30 W / 15 W | 1.2 dB @ 10 GHz | 50 dB @ 10 GHz | 30 ns / 50 ns | Available | Available | In Development | |
FW2023 | 10 GHz – 14 GHz | SP2T Reflective | 30 W / 15 W | 1.5 dB @ 12 GHz | 33 dB @ 12 GHz | 30 ns / 50 ns | Available | Available | In Development | |
FW2024 | 8 GHz – 12 GHz | SP2T Reflective | 60 W / 30 W | 1.0 dB @ 10 GHz | 33 dB @ 10 GHz | 30 ns / 50 ns | In Development | In Development | In Development | |
FW2025 | 10 GHz – 14 GHz | SP2T Reflective | 60 W / 30 W | 1.0 dB @ 12 GHz | 34 dB @ 12 GHz | 30 ns / 50 ns | In Development | In Development | In Development |
Fast Switching, Broadband, Ease of Use
How the product compares with competing technology or products
Other Switches
Bandwidth
Gan on Silicon typically limited to 6 GHz, while SoI based high power products often do not exceed 4 GHz.
Switching Time
Typical high power switches require from 500 ns to 30 us for switching and up to 15 us to settle to 0.1 dB.
Ease of Use
Pin diode switches require up to 25 external components plus current and voltage drivers for biasing.
Finwave Switches
Bandwidth
Broadband, high power performance to 12 GHz. Provides 100% more bandwidth than other GaN on Si switches and over 200% more bandwidth when compared with SoI based high power switches.
Switching Time
FW2001 is switching in 80 ns and settles to 0.1 dB within 200 ns.
Ease of Use
With no external component and a compact 3.0 mm x 3.0 mm package, the Finwave switch can save 95% of the PCB space compared with a typical PIN diode solution.
Case Study
Simplify and Upgrade PIN Diode Based Designs
Simplified Design
Finwave provides a significantly less complex, smaller and lighter weight solution, ideal for airborne applications.
Continuous Frequency Coverage without Matching
From low to high frequencies, ideal for Test and Measurement applications and other broadband systems.
Higher Isolation
Provides better Isolation by 2 – 20 dB at 1 – 5 GHz. This is a nice addition since PIN diodes require high voltage reverse bias to provide good isolation.
“Finwave is what happens when brilliant university research combines with
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