Finwave announces RFMW Distribution Agreement

March 3, 2025

Finwave Semiconductor Announces Global Distribution Agreement with RFMW

Partnership Expands Access to Finwave’s Leading-Edge GaN-on-Si RF Chips

WALTHAM, Mass., March 03, 2025 (GLOBE NEWSWIRE) — Leading GaN (Gallium Nitride) technology innovator Finwave Semiconductor, Inc. has strengthened its commitment to addressing the increasingly demanding wireless communication landscape by signing a global distribution agreement with RFMW. This partnership represents a significant step in Finwave’s evolution from a technology-driven company to a product-driven company.

The premier distributor of radio frequency (RF), microwave semiconductors, and components, RFMW delivers leading-edge RF semiconductor chips to a vast array of customers and applications worldwide. By adding Finwave’s portfolio – which includes high-power RF switches and upcoming RF power amplifiers – RFMW enhances its line card, filling a key gap and broadening its offerings to customers.

With a product roadmap designed to harness the full potential of GaN, Finwave is committed to delivering cost-effective RF devices, delivering enhanced performance and enabling more efficient RF systems. Finwave’s unique and highly differentiated GaN-on Si RF chips are targeted to a wide-array of RF applications, including communications infrastructure (base stations, MIMO, small cells, land mobile radios, customer premise equipment, fixed wireless access), Wi-Fi routers, satellite, radar, drones, anti-drones, test & measurement equipment, and medical equipment.

“RFMW is excited to partner with Finwave to bring their cutting-edge GaN-on-Si technology to our customers,” said Joel Levine, President, RFMW. “Finwave’s innovative solutions deliver exceptional bandwidth and power performance, aligning perfectly with our commitment to providing best-in-class RF and microwave components. This partnership enables us to support our customers with high-efficiency, next-generation products that drive advancements in 5G, aerospace, and defense applications.”

“This is an exciting time for Finwave as we transition from technology development to the commercialization of RF products based on our unique and highly differentiated GaN-on-Si RF technology,” said Finwave Semiconductor CEO Dr. Pierre-Yves Lesaicherre. “Our partnership with RFMW is a strong validation that our innovative technology can deliver high-performance solutions for a wide range of customers and applications worldwide. By working with RFMW, we are significantly expanding access to our cutting-edge GaN-on-Si RF chips, reaching customers who may not have been aware of Finwave or previously had access to our products.”

Evaluation kits and product samples will be available from RFMW later this month, with the global release of Finwave’s first RF switches planned for April 2025.

This week at MWC25 in Barcelona, Finwave will host meetings in Hall 2, #2D12MR to provide updates on the performance and availability of its forthcoming RF switch lineup as well as the company’s future power amplifier products. Please connect with Finwave at marten@finwavesemi.com for more information or to schedule an appointment. To learn more, visit www.finwavesemi.com.

About Finwave Semiconductor, Inc.
Finwave Semiconductor is shaping the future with innovative transistor designs and breakthrough process technology that unlock the full potential of Gallium Nitride (GaN). Founded by prominent MIT innovators, the company is driving revolutionary advancements for 5G and 6G mobile infrastructure, smartphones, medical devices, and cloud computing. Finwave’s portfolio includes award-winning GaN FinFETs, advanced E-mode MISHEMTs, and high-performance RF switches. For more information, visit www.finwavesemi.com or follow the company on LinkedIn.

Media Contact:
Stephanie Olsen
Lages & Associates
(949) 453-8080
stephanie@lages.com

Finwave Semiconductor Announces Global Distribution

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Mike Noonen is CEO of Swave Photonics and has 30 years of experience leading technology businesses resulting in two IPOs and multiple acquisitions. Most recently he was the CEO of MixComm acquired by Sivers Semiconductor in early 2022. 

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In 2013 he was elected to the Global Semiconductor Alliance Board of Directors. He holds a BSEE from Colorado State University and in 2012 was named the College of Engineering Distinguished Alumni of the Year.

Jennifer Uhrig

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Jennifer Uhrig is Senior Managing Director at Fine Structure Ventures. Previously, Ms. Uhrig worked for over two decades in the Fidelity Growth Group as an equity analyst and fund manager. In her portfolio manager assignments, Ms. Uhrig managed start-up products, including the Fidelity Mid-Cap Stock Fund and larger funds including the Blue Chip Growth Fund with assets of up to $38 billion. She has more than 35 years of investment experience and has heard over 20,000 company pitches.

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In addition to her assignment at Fine Structures, Ms. Uhrig is a Senior Advisor to Fidelity Management & Research Company. In this capacity, she serves on the Board of Directors of COLT Technology Services, where she chairs the Audit Committee, and on the Board of Directors of Geode Capital Management.  

Prior to joining Fidelity, Ms. Uhrig was a research associate for Fred Alger Management. 

Ms. Uhrig holds an MBA from the Tuck School at Dartmouth College and a B.A. in Government cum laude from Harvard College.

Jim Mao

Founder of Citta Capital

Jim is the founding and managing partner of Citta Capital, a venture capital firm in Silicon Valley focused on early growth stage technology startups in Enterprise/SaaS, AI, cloud computing, and digital healthcare. Previously, he was a Partner at WestSummit Capital, investing in Enterprise, Cloud, Big Data, AI, robotics, and digital media. 

With extensive experience in startups and established companies, Jim has worked in Internet, mobile/wireless, digital media, telecom, semiconductor, and enterprise software industries, leading numerous successful investments and M&A transactions. 

Jim has MBA degree from the University of Southern California, Master degree in Electrical and Computer Engineering and BA degree in Physics from the University of Waterloo.

Matt East

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Matt East has a career spanning over 37 years in the financial management of semiconductor businesses. He has worked for Siliconix, JDSU, and Philips. The bulk of the years were spent with Philips Semiconductor (NXP) 23 Years and Lumileds 5 Years, both entities being subsidiaries of Philips.  Prior to Finwave, Matt was the CFO of Lumileds, a LED lighting company that was a spinoff from Philips Semiconductor. Prior to Lumileds, Matt held a variety of financial roles at Philips Semiconductor and subsequently NXP Semiconductor where he oversaw Business lines, Business Units, and Operational controller for several fabs.  Matt has a BS in Business Management and a Minor in Economics from San Jose State University.

Ian Warbrick

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Ian Warbrick brings his successful track record leading large, medium and startup organizations to his role as Finwave’s COO.

A senior executive with a broad range of expertise in operations and finance, Ian has served as a critical resource in rapid growth companies such as Peregrine Semiconductor (and its acquiring company, Murata) and International Rectifier.  He is experienced at managing growth through volatile semiconductor cycles, managing the development of new wafer technology, building high volume wafer fabrication facilities, leading operations through public listings and more.

Ian holds a BSC from Southampton University in the UK.

Jim Cable

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Jim Cable is Finwave’s Chief Strategy Officer. Previously, Jim served in several leadership roles at Peregrine Semiconductor (now pSemi), including CTO, Chairman, and CEO. Under his guidance, Peregrine had a successful IPO in 2012. In 2014, the company was acquired by Murata Manufacturing Company. From 2017-2019, he also served as Murata’s Director of Global R&D.
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Tomás Palacios is a co-founder of Finwave and a Professor in the Department of Electrical Engineering and Computer Science at MIT. Tomás has been working on GaN RF and power electronics since 1999, and his group has set new benchmarks for these devices numerous times.

Tomás’ work has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers; the 2012 and 2019 IEEE George Smith Award; the NSF, ONR, and DARPA Young Faculty Awards; the Intel Outstanding Research Award, among many others.

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Bin Lu

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Dr. Bin Lu is co-founder of Finwave Semiconductor. He has made groundbreaking contributions to GaN-on-Si technology, including advancements in GaN-on-Si breakdown and reliability mechanisms, the development of novel normally-off device structures, and pioneering work in GaN FinFET technology, for which Dr. Lu received the prestigious 2012 IEEE Electron Devices Society George Smith Award. He has authored over 22 peer-reviewed publications, and holds more than 22 issued patents related to GaN-on-Si technology. Dr. Lu earned his B.S. degree from Tsinghua University and his S.M. and Ph.D. degrees from MIT.

Pierre-Yves Lesaicherre 

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Pierre-Yves Lesaicherre was appointed CEO of Finwave Semiconductor in June 2023. Prior to that, he was the CEO of Nanometrics, a leading provider of high-performance process control metrology and inspection systems used primarily in the fabrication of integrated circuits, sensors & discrete components.
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Michael Guyonnet

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