Wide bandwidth, high power and fast switching using proprietary GaN-Si technology at the largest RF and Microwave event
Partnership Expands Access to Finwave’s Leading-Edge GaN-on-Si RF Chips WALTHAM, Mass., March 03, 2025 (GLOBE NEWSWIRE) — Leading GaN (Gallium Nitride) technology innovator Finwave Semiconductor, Inc. has
Finwave will be exhibiting at the MWC25 in Barcelona, Spain, March 3 – 6. We’re excited once again to exhibit at Mobile World Congress –
The company’s groundbreaking work in GaN FinFETs could open the door to high-power, high-linearity mmWave 5G power amplifiers. Finwave Semiconductor and GlobalFoundries Partner on RF
Finwave Semiconductor included in Microwave Journals annual industry predictions for 2025 As we begin a new year, Finwave CEO Pierre-Yves Lesaicherre has provided some thoughts
Excellent article in in our favorite publication Microwave Journal describing Finwave’s approach to GaN -on-Silicon for high volume applications such as smartphones and other mobile
March 24, 2025 Marten Seth, Technical Marketing Manager, Finwave Semiconductor Finwave’s innovative GaN (Gallium Nitride) on Silicon approach is advancing RF technology by delivering the
Our CEO Pierre-Yves Lesaicherre recently caught up with popular semiconductor news site SemiWiki.com. In this Q&A, Pierre-Yves reflects on some of the high points from 2024
