Product

RF Switch

High-power RF switches are essential for applications requiring robust signal transmission and durability. These switches are designed to operate efficiently under high power levels, making them ideal for use in demanding environments such as defense systems, satellite communications, and high-power transmitters.

Finwave Application Advantage

The unique combination of fast switching and settling time, broadband performance, and high power handling makes them ideal as Tx/Rx switches in 5G communication systems, SDRs, and RADAR systems. To further improve ease of use and the excellent SWaP-C metrics, the entire product line is designed to be used without any external components. This makes them ideal for replacement of legacy switch solutions.

To further improve ease of use and the excellent SWaP-C metrics, the entire product line is designed to be used without any external components.

Product Specs

Product
FW2001
FW2002
FW2003
FW2004
Frequency Range
30 MHz – 12 GHz
30 MHz – 12 GHz
30 MHz – 5 GHz
30 MHz – 12 GHz
Configuration
3×3 QFN SP2T
3×3 QFN SP2T
3×3 QFN SP2T
3×3 QFN SP2T
Power
10 W CW / 50 W Peak
20 W CW / 80 W Peak
40 W CW / 150 W Peak
5 W CW / 20 W Peak
Insertion Loss
0.9 dB @ 6GHz
1.0 dB @ 6 GHz
0.6 dB @ 3 GHz
0.7 dB @ 6 GHz
Isolation
30 dB @ 12 GHz
26.5 dB @ 12 GHz
27 dB @ 5 GHz
26.5 dB @ 5 GHz
Input IP3
65 dBm
66 dBm
70 dBm
65 dBm
Switching Time
80 ns / 200 ns
145 ns / 250 ns
240 ns / 340 ns
35 ns / 155 ns
Sample Status
Samples Available
Samples Available
Samples Available
In Development
EVK Status
EVK Available
EVK Available
EVK Available

Fast Switching, Broadband, Ease of Use

How the product compares with competing technology or products

Other Switches

Bandwidth

Gan on Silicon typically limited to 6 GHz, while SoI based high power products often do not exceed 4 GHz.

Switching Time

Typical high power switches require from 500 ns to 30 us for switching and up to 15 us to settle to 0.1 dB.

Ease of Use

Pin diode switches require up to 25 external components plus current and voltage drivers for biasing.

Finwave Switches

Bandwidth

Broadband, high power performance to 12 GHz. Provides 100% more bandwidth than other GaN on Si switches and over 200% more bandwidth when compared with SoI based high power switches.

Switching Time

FW2001 is switching in 80 ns and settles to 0.1 dB withing 200 ns.

Ease of Use

With no external component and a compact 3.0 mm x 3.0 mm package, the Finwave switch can save 95% of the PCB space compared with a typical PIN diode solution.

Case Study

Simplify and Upgrade PIN Diode Based Designs

Finwave high power GaN on Si RF switches offer significant advantages in ease of use over traditional PIN diodes, particularly in terms of integration, control, and system design. By choosing Finwave GaN on Si RF switches over PIN diodes, engineers can achieve more efficient designs with fewer constraints, leading to faster time-to-market and lower overall costs.

Simplified Design

Finwave provides a significantly less complex, smaller and lighter weight solution, ideal for airborne applications.

Continuous Frequency Coverage without Matching

From low to high frequencies, ideal for Test and Measurement applications and other broadband systems.

Higher Isolation

Provides better Isolation by 2 – 20 dB at 1 – 5 GHz. This is a nice addition since PIN diiodes require high voltage reverse bias to provide good isolation.

“Finwave is what happens when brilliant university research combines with
accomplished industry professionals who have experience building companies and taking them from startup to IPO.”

JIM CABLE

PH.D. CHIEF STRATEGY OFFICER AT FINWAVE

Discover the Next-Generation of High-Performance Semiconductors

Gallium Nitride is the ideal material for addressing the energy revolution for the 21st century.

Tomas Palacios, MIT professor and Finwave co-founder