
Editor James E. Carrol Talks about GaN-on-Silicon with Finwave CEO Pierre-Yves Lesaicherre
Finwave CEO Pierre-Yves Lesaicherre caught up with editor James E. Carroll to talk all things Finwave – from our big funding news to the benefits
Wide bandwidth, high power and fast switching using proprietary GaN-Si technology at the largest RF and Microwave event
Finwave CEO Pierre-Yves Lesaicherre caught up with editor James E. Carroll to talk all things Finwave – from our big funding news to the benefits
Investor Confidence Key to Company’s Next Phase: Productizing Disruptive GaN-on-Si Technology to Address Increasing Performance and Efficiency Demands May 14, 2025 10:00 ET | Source: Finwave Semiconductor
The countdown to IMS – the International Microwave Symposium – is on! With thousands from around the world set to attend and more than 550
March 24, 2025 Marten Seth, Technical Marketing Manager, Finwave Semiconductor Finwave’s innovative GaN (Gallium Nitride) on Silicon approach is advancing RF technology by delivering the