Our Technology

Gallium Nitride Technology Reinvented

Unleashing the True Power of GaN

Gallium Nitride (GaN), an amazing semiconductor with extraordinary electronic properties, is becoming the most important semiconductor technology to power the future of sustainability. Created by some of the world's prominent GaN pioneers and innovators from MIT, Finwave is leading the innovation to bring the true potential of GaN to the world.

Finwave’s innovations include

Recognized by the IEEE Electron Devices Society's George E. Smith Award, our team continues to innovate and push the boundaries of GaN technology.

CTO and founder Bin Lu holding a Finwave 8" GaN-on-Si wafer
Technology SHOWCASE

E-Mode GaN MISHEMT

Metal-Insulator-Semiconductor
High-Electron-Mobility Transistor

E-Mode MISHEMT Cartoon showing Cap Layer, Etch Stop, and Barrier
  • "Etch-stop" technology enables enhancement-mode with excellent RF performance 3
  • Low contact resistance enables envelope-tracking operation below 5V for handset RFFE
  • "MISHEMT" technology for superior channel scalability for mmWave frequencies and beyond
  • 8" Si compatible process, scalable to 12"
Waterfall curve of E-Mode device at 8 GHz, showing delta PAE < 5% and delta Gt < 1.5dB from Vdd=2V->5V.

Load pull measurement at 8 GHz showing ΔPAE < 5% & ΔGt < 1.5dB for Vdd = 2V to 5V

Technology SHOWCASE

3DGaN FinFET

FinFET Transistor Cartoon Gate Metal over Fins
  • Over 10dB linearity improvement with "multi-fin" technology 2
  • Excellent channel control for reduced leakage current 4
  • 3D electric field control for reduced memory effects
  • 8" Si compatible process, scalable to 12"
Linearity of the FinFET vs Planar Device shown in a gm/Vg curve. The FinFET's gm curve is much flatter.

References

​[1] V. Johnson, Z. Pogrebin, M. Dipsey, H.S. Emmer, Y. Zhang, D.F. Pei and B. Lu, “200-mm enhancement-mode low-knee-voltage GaN-on-Si MISFETs for high-frequency handset applications,” CS MANTECH, 4.2.4, 2004.

[2] S. Joglekar, et. al. and T. Palacios, "Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation," in IEEE International Electron Devices Meeting (IEDM) Dig., Dec. 2017, pp. 25.3.1-4.

[3] B. Lu, M. Sun and T. Palacios, "An etch-stop barrier structure for GaN high electron mobility transistors," IEEE Electron Device Letters, 34 (3), pp. 990-992, Mar. 2013.

[4] B. Lu, E. Matioli, and T. Palacios, "Tri-gate normally-off GaN  Power MISFET," IEEE Electron Device Letters, 33 (3), pp. 360-362, Mar. 2012.

[5] D.S. Lee, et. al. and T. Palacios, "nanowire channel inAlGaN/GaN HEMTs with high linearity of gm and fT," IEEE Electron Device Letters, 34 (8), pp.969-971, Aug. 2013.

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