Finwave Semiconductor and GlobalFoundries Partner on RF GaN-on- Si Technology for Cellular Handset Applications

The company’s groundbreaking work in GaN FinFETs could open the door to high-power, high-linearity mmWave 5G power amplifiers.

Finwave Semiconductor and GlobalFoundries Partner on RF GaN-on- Si Technology for Cellular Handset Applications

New Agreement to Accelerate Development and Volume Production of Finwave’s E-Mode MISHEMT RF GaN-on-Si Technology

WALTHAM, Mass., Aug. 29, 2024 – Finwave Semiconductor, Inc., a leading innovator in GaN (Gallium Nitride) technology, today announced a strategic technology development and licensing agreement with GlobalFoundries (GF), the world’s leading specialty foundry with a rich history of RF leadership.

This partnership merges Finwave’s cutting-edge GaN-on-Si technology with GF’s U.S.-based high-volume manufacturing capabilities and long legacy of RF innovation including industry-leading RF Silicon-On-Insulator and Silicon-Germanium solutions. The collaboration will focus on optimizing and scaling Finwave’s innovative enhancement-mode (E-mode) MISHEMT technology to volume production at GF’s 200mm semiconductor manufacturing facility in Burlington, Vermont.

Finwave’s advanced 200mm GaN-on-Si E-mode MISHEMT platform offers exceptional RF performance, delivering excellent gain and efficiency at sub-5V voltages, while ensuring high uniformity across 200mm wafers, as highlighted in Finwave’s recent presentation at the CS Mantech 2024 Industry Conference. Leveraging Finwave’s technology, GF’s comprehensive 90RFGaN platform will deliver high power density and efficiency, enabling high-performance, optimized devices that save on footprint and cost. This partnership presents a compelling solution for high-efficiency power amplifiers in applications where traditional GaAs and Si technologies fall short, including new higher frequency 5G FR2/FR3 bands, 6G and mmWave amplifiers, and high-power Wi-Fi 7 systems, where superior range and efficiency are critical.

“This agreement marks a significant milestone for Finwave” said Finwave Semiconductor CEO Dr. Pierre-Yves Lesaicherre. “By leveraging GlobalFoundries’ extensive manufacturing capabilities and bringing Finwave’s E-mode MISHEMT technology breakthrough to volume production, we are unlocking large growth opportunities as we address the increasingly demanding wireless communication landscape. This partnership opens the door to further innovation and integration of RF Front-Ends onto a single GaN-on-Si device. This has never been done before, and has the potential to reduce cost and size, both of which are at a premium in cellphones.”

“As next-generation wireless networks require devices that operate at higher frequencies, Finwave’s low-voltage GaN-on-Si technology combined with GF’s 90RFGaN platform will become a vital part of power amplifiers in future mobile phones, ensuring both robust performance and high-power efficiency,” said Shankaran Janardhanan, Vice President and General Manager of GF’s RF Business.

Finwave’s E-mode MISHEMT technology, developed over more than a decade of research and innovation, has been supported by federal funding from the U.S. Department of Energy Advanced Research Projects Agency-Energy (ARPA-E) through its Seeding Critical Advances for Leading Energy technologies with Untapped Potential (SCALEUP) program, as well as private investments from deep-tech investors and strategic partners.

Leveraging GF’s high-volume CMOS manufacturing capabilities, Finwave and GlobalFoundries aim to qualify this technology for mass production in the first half of 2026.

About GlobalFoundries

GlobalFoundries (GF) is one of the world’s leading semiconductor manufacturers. GF is redefining innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions that provide leadership performance in pervasive high growth markets. GF offers a unique mix of design, development, and fabrication services. With a talented and diverse workforce and an at-scale manufacturing footprint spanning the U.S., Europe and Asia, GF is a trusted technology source to its worldwide customers. For more information, visit www.gf.com.

©GlobalFoundries Inc., GF, GlobalFoundries, the GF logos and other GF marks are trademarks of GlobalFoundries Inc. or its subsidiaries. All other trademarks are the property of their respective owners.

About Finwave Semiconductor, Inc.

Finwave Semiconductor is shaping the future with innovative transistor designs and breakthrough process technology that unlock the full potential of Gallium Nitride (GaN). Founded by prominent MIT innovators, the company is driving revolutionary advancements for 5G and 6G mobile infrastructure, smartphones, medical devices, and cloud computing. Finwave’s portfolio includes award-winning GaN FinFETs, advanced E-mode MISHEMTs, and high-performance RF switches. For more information, visit www.finwavesemi.com or follow the company on LinkedIn.

Media Contact:

  • Stephanie Olsen
  • Lages & Associates
  • (949) 453-8080
  • stephanie@lages.com

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Mike Noonen

CEO of Swave Photonics

Mike Noonen is CEO of Swave Photonics and has 30 years of experience leading technology businesses resulting in two IPOs and multiple acquisitions. Most recently he was the CEO of MixComm acquired by Sivers Semiconductor in early 2022. 

Noonen was the Chairman and co-founder of Silicon Catalyst, the World’s 1st semiconductor incubator and EE Times 2015 Start-up of the Year. He has advised and led turnarounds at numerous innovative private and public companies such as Ambiq Micro, SiFive, Silego, Mythic, Kilopass, and Rambus. Previously, Noonen was:

  • EVP, Global Products, Design, Sales, & Marketing at GlobalFoundries
  • EVP, Worldwide Sales & Marketing, at NXP Semiconductors 
  • SVP, Global Sales & Marketing at National Semiconductor

 

In 2013 he was elected to the Global Semiconductor Alliance Board of Directors. He holds a BSEE from Colorado State University and in 2012 was named the College of Engineering Distinguished Alumni of the Year.

Jennifer Uhrig

Chair of the Board

Jennifer Uhrig is Senior Managing Director at Fine Structure Ventures. Previously, Ms. Uhrig worked for over two decades in the Fidelity Growth Group as an equity analyst and fund manager. In her portfolio manager assignments, Ms. Uhrig managed start-up products, including the Fidelity Mid-Cap Stock Fund and larger funds including the Blue Chip Growth Fund with assets of up to $38 billion. She has more than 35 years of investment experience and has heard over 20,000 company pitches.

Ms. Uhrig serves on the Board of Directors of portfolio companies Finwave Semiconductor, Pallidus Inc, Hoxton Farms and Feon Energy.

In addition to her assignment at Fine Structures, Ms. Uhrig is a Senior Advisor to Fidelity Management & Research Company. In this capacity, she serves on the Board of Directors of COLT Technology Services, where she chairs the Audit Committee, and on the Board of Directors of Geode Capital Management.  

Prior to joining Fidelity, Ms. Uhrig was a research associate for Fred Alger Management. 

Ms. Uhrig holds an MBA from the Tuck School at Dartmouth College and a B.A. in Government cum laude from Harvard College.

Jim Mao

Founder of Citta Capital

Jim is the founding and managing partner of Citta Capital, a venture capital firm in Silicon Valley focused on early growth stage technology startups in Enterprise/SaaS, AI, cloud computing, and digital healthcare. Previously, he was a Partner at WestSummit Capital, investing in Enterprise, Cloud, Big Data, AI, robotics, and digital media. 

With extensive experience in startups and established companies, Jim has worked in Internet, mobile/wireless, digital media, telecom, semiconductor, and enterprise software industries, leading numerous successful investments and M&A transactions. 

Jim has MBA degree from the University of Southern California, Master degree in Electrical and Computer Engineering and BA degree in Physics from the University of Waterloo.

Matt East

CFO

Matt East has a career spanning over 37 years in the financial management of semiconductor businesses. He has worked for Siliconix, JDSU, and Philips. The bulk of the years were spent with Philips Semiconductor (NXP) 23 Years and Lumileds 5 Years, both entities being subsidiaries of Philips.  Prior to Finwave, Matt was the CFO of Lumileds, a LED lighting company that was a spinoff from Philips Semiconductor. Prior to Lumileds, Matt held a variety of financial roles at Philips Semiconductor and subsequently NXP Semiconductor where he oversaw Business lines, Business Units, and Operational controller for several fabs.  Matt has a BS in Business Management and a Minor in Economics from San Jose State University.

Ian Warbrick

COO

‍Ian Warbrick brings his successful track record leading large, medium and startup organizations to his role as Finwave’s COO.

A senior executive with a broad range of expertise in operations and finance, Ian has served as a critical resource in rapid growth companies such as Peregrine Semiconductor (and its acquiring company, Murata) and International Rectifier.  He is experienced at managing growth through volatile semiconductor cycles, managing the development of new wafer technology, building high volume wafer fabrication facilities, leading operations through public listings and more.

Ian holds a BSC from Southampton University in the UK.

Jim Cable

Chief Strategy Officer

Jim Cable is Finwave’s Chief Strategy Officer. Previously, Jim served in several leadership roles at Peregrine Semiconductor (now pSemi), including CTO, Chairman, and CEO. Under his guidance, Peregrine had a successful IPO in 2012. In 2014, the company was acquired by Murata Manufacturing Company. From 2017-2019, he also served as Murata’s Director of Global R&D.
Prior to joining Peregrine, Jim held various technical and management roles at TRW and Hughes.
Jim is author/co-author of roughly 100 patents, and his education credentials include a BS in Physics from UC Riverside and MSEE and Ph.D. degrees in electrical engineering from the University of California – Los Angeles.

Prof. Tomas Palacios

Co-Founder

Tomás Palacios is a co-founder of Finwave and a Professor in the Department of Electrical Engineering and Computer Science at MIT. Tomás has been working on GaN RF and power electronics since 1999, and his group has set new benchmarks for these devices numerous times.

Tomás’ work has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers; the 2012 and 2019 IEEE George Smith Award; the NSF, ONR, and DARPA Young Faculty Awards; the Intel Outstanding Research Award, among many others.

Tomás received his Ph.D. from the University of California Santa Barbara, and his undergraduate degree in Telecommunication Engineering from the Universidad Politécnica de Madrid (Spain). He is a Fellow of IEEE.

Bin Lu

CTO & Co-Founder

Dr. Bin Lu is the Chief Technology Officer and co-founder of Finwave Semiconductor. He has made groundbreaking contributions to GaN-on-Si technology, including advancements in GaN-on-Si breakdown and reliability mechanisms, the development of novel normally-off device structures, and pioneering work in GaN FinFET technology, for which Dr. Lu received the prestigious 2012 IEEE Electron Devices Society George Smith Award. He has authored over 22 peer-reviewed publications, and holds more than 22 issued patents related to GaN-on-Si technology. Dr. Lu earned his B.S. degree from Tsinghua University and his S.M. and Ph.D. degrees from MIT.

Pierre-Yves Lesaicherre 

CEO

Pierre-Yves Lesaicherre was appointed CEO of Finwave Semiconductor in June 2023. Prior to that, he was the CEO of Nanometrics, a leading provider of high-performance process control metrology and inspection systems used primarily in the fabrication of integrated circuits, sensors & discrete components.
 He served as CEO through the company’s merger with Rudolph Technologies to form Onto Innovation. Before that, Dr. Lesaicherre was CEO of Lumileds, a leading global light engine company, with revenues in excess of $2 billion, that supplies high-quality LED components to the lighting and consumer industries as well as LED and conventional lamps to the automotive industry.
Prior to that, Dr. Lesaicherre served in various Executive & Director roles at NXP and Philips Semiconductors.
Dr. Lesaicherre holds an MBA from INSEAD, and has MS and PhD degrees in Material Science from the Grenoble Institute of Technology (Grenoble INP). He is a Board Leadership Fellow, Governance Fellow and Director Certified for NACD (National Association of Corporate Directors) and an active member of NACD and SVDX (Silicon Valley Director’s Exchange).

Michael Guyonnet

VP Marketing

Mr. Guyonnet joins Finwave from Gallium Semiconductors, a high power amplifier ODM he helped to set up before being eventually acquired by Guerrilla RF. He previously served in technical and marketing leadership roles at Renesas, Ampleon, MACOM and NXP. He began his career as a design and modeling engineer at Freescale, and received his PhD and Master’s degrees from Université de Limoges and a Bachelor’sdegree from Université d’Orléans.