We are delighted to share that Finwave Semiconductor, Inc. recently attended the 2023 International Microwave Symposium (IMS).
We showcased our cutting-edge semiconductor solutions and demonstrated the unique capabilities and applications of our 3DGaN™. Our PA and RF Switch performance metrics garnered rave reviews from our esteemed customers, analysts, and the press.
We extend our gratitude to the organizers of IMS for hosting a remarkable event, and we would like to thank all the attendees who visited our booth. Your support and interest in our technology is truly appreciated.
Finwave remains dedicated to pushing the boundaries of microwave technology and maintaining our position at the forefront of industry advancements. Looking ahead, we eagerly anticipate seeing everyone again next year in Washington DC for IMS 2024 where we will unveil a wide range of new products leveraging our proprietary 3DGaN™.
Stay tuned. There is more to come.
Finwave Semiconductor is shaping the future with innovative transistor designs and breakthrough process technology that unlock the full potential of Gallium Nitride (GaN). Founded by prominent MIT innovators, the company is driving revolutionary advancements for 5G and 6G mobile infrastructure, smartphones, medical devices, and cloud computing. Finwave’s portfolio includes award-winning GaN FinFETs, advanced E-mode MISHEMTs, and high-performance RF switches. For more information, visit www.finwavesemi.com or follow the company on LinkedIn.
Stephanie Olsen
Lages & Associates
(949) 453-8080
stephanie@lages.com
